WebDetails, datasheet, quote on part number: IRF220 Features, Applications Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. WebIRF520 www.vishay.com Vishay Siliconix S21-0819-Rev. C, 02-Aug-2024 4 Document Number: 91017 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
(PDF) IRF220 Datasheet - N-Channel MOSFET Transistor
WebOthers with the same file for datasheet: IRF220, IRF220-223, IRF223, IRF621, IRF622: Download IRF221 datasheet from Fairchild Semiconductor: pdf 170 kb : N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. Download IRF221 datasheet from General Electric Solid … http://www.datasheet.es/PDF/1035379/IRF220-pdf.html flora lee architect
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http://www.datasheet.es/PDF/1035379/IRF220-pdf.html WebIRF620 www.vishay.com Vishay Siliconix S21-0819-Rev. C, 02-Aug-2024 4 Document Number: 91027 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. WebTransistor IRF520 - MOSFET de Canal N TO-220 - Datasheet . Modelo: IRF520. Encapsulamento: TO-220 3 Pinos. Tensão VDS Drain-source: 100V. Corrente de drenagem: 9.2A. Dissipação de potência total: 60W. Temperatura da junção: 175 Graus Celsius. Temperatura de Operação: -55 a +175 Graus Celsius. flora leather